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US 6,204,525 B1Granted
Ferroelectric thin film device and method of producing the same
AssigneeMurata Manufacturing Co., Ltd.
InventorsAtsushi Sakurai, Xiao-min Li, Kosuke Shiratsuyu
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Abstract
A ferroelectric thin film device comprises an Si substrate; a TiN thin film whose Ti component is partially replaced with Al, the TiN thin film being formed on the Si substrate; and a ferroelectric thin film of an oxide with a perovskite structure formed on the TiN thin film, wherein the amount of Al atoms present at Ti sites of the TiN thin film after partially replacing Ti with Al is within the range from about 1% to 30% and the oxygen atomic content of the TiN thin film is equal to or less than about 5%.
Claims10
A ferroelectric thin film device comprising:
- an Si substrate;
- a TiN thin film whose Ti component is partially replaced with Al, on said Si substrate;
- and
- a ferroelectric thin film of a perovskite oxide on said TiN thin film,
- wherein the amount of Al atoms present at Ti sites of said TiN thin film is within the range from about 1% to 30% and the oxygen atomic content of said TiN thin film is equal to or less than about 5%.
2 more elements
Dependencies are inferred from the claim text.