US 6,204,521 B1 · Thin film transistors

Abstract

A semiconductor processing method of forming a conductive polysilicon line relative to a substrate includes, a) providing a line of silicon on a substrate, the line having an outer top surface and outwardly exposed opposing outer sidewall surfaces, the line ultimately comprising conductively doped polysilicon; b) masking the line outer top surface with a masking material; c) with the masking material in place, depositing a metal layer atop the substrate and over the masking material and the outwardly exposed line outer sidewall surfaces; d) annealing the line to impart a silicidation reaction between the metal and opposing silicon sidewalls to form opposing metal silicide runners extending along the line sidewalls, the masking material preventing a silicidation reaction from occurring between the metal and line outer top surface; and e) stripping the metal layer from atop the line. Such a line is preferably used as a bottom gate for a thin film transistor. The invention also includes conductive polysilicon lines and thin film transistors.

Claims8

Dependent claims

A thin film transistor comprising:

a substrate;
a polysilicon thin film transistor layer over the substrate and having a source region and a drain region received therein;
a gate line adjacent the polysilicon thin film transistor layer comprising different conductive materials, one of said conductive materials comprising doped polysilicon, and another of the conductive materials being more conductive than the doped polysilicon material;
and
wherein the another of the materials comprising the gate line is not polysilicon.

2 more elements

Dependencies are inferred from the claim text.

Thin film transistors

Life of this patent

Thin film transistors

Life of this patent

Abstract

Claims8