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US 6,204,193 B1Granted
Method for etching
AssigneeSony Corporation
InventorTomohide Jozaki
Life of this patent
Estimating the term…
Abstract
A method for etching a laminated film comprising at least two layers of a semiconductor device, the method comprising: a step, in which etching of an upper layer is started with a first etching gas, and the etching of the upper layer is stopped before a lower layer is exposed; and a step, in which a remainder of the upper layer and the lower layer is etched with a second etching gas.
Claims1
A process for producing a semiconductor device comprising etching a laminated film comprising a silicon nitride film having an oxide film formed thereon, said process comprising:
- a step, in which etching of said oxide film is started with a C4F8 series gas, and said etching with said C4F8 series gas is stopped before said silicon nitride film is exposed;
- and
- a step, in which a remainder of said oxide film and said silicon nitride film is etched with switching an etching gas from the C4F8 series gas to a CHF3 series gas.
Dependencies are inferred from the claim text.