Substituted phenylethylene precursor deposition method

In a chamber having a wafer chuck to receive an integrated circuit (IC) wafer and a showerhead to distribute materials on a Cu-receiving surface of the IC wafer, a method for forming a copper (Cu) seed layer on the Cu-receiving surface comprising steps of:

• a) forming a liquid Cu precursor compound including Cu+1(hexafluoroacetylacetonate) and an α-methylstyrene ligand;
• b) adding approximately 5% α-methylstyrene ligand, as measured by weight ratio of the Cu precursor compound, to create a Cu precursor compound blend;
• c) establishing a Cu precursor vaporization temperature in the range of approximately 65 degrees C.;
• d) heating the wafer chuck to a temperature of approximately 200 degrees C.;
• e) creating a chamber pressure of approximately 0.5 T;
• f) carrying the vaporized Cu precursor compound blend with a helium carrier gas flow of approximately 100 sccm;
• g) establishing a distance between the showerhead and the Cu-receiving surface of approximately 30 mm;
• h) volatilizing the Cu precursor compound blend;
• i) flowing the Cu precursor compound blend at a liquid precursor flow rate in the range of approximately 0.15 mL/min;
• j) carrying water vapor with a helium gas flow rate of approximately of 5 sccm;
• k) in response to Steps a) through j), forming a Cu seed layer on the Cu-receiving surface;
• and
• l) depositing a second layer of Cu film overlying the Cu seed layer, whereby a thick Cu film with good adhesive qualities is formed.

In a chamber having a wafer chuck to receive an integrated circuit (IC) wafer and a showerhead to distribute materials on a Cu-receiving surface of the IC wafer, a method for forming a copper (Cu) seed layer on the Cu-receiving surface comprising steps of:

• a) forming a liquid Cu precursor compound including Cu+1(hexafluoroacetylacetonate) and an α-methylstyrene ligand;
• b) adding approximately 15% α-methylstyrene ligand, as measured by weight ratio of the Cu precursor compound, to create a Cu precursor compound blend;
• c) establishing a Cu precursor vaporization temperature in the range of approximately 65 degrees C.;
• d) heating the wafer chuck to a temperature of approximately 190 degrees C.;
• e) creating a chamber pressure of approximately 0.5 T;
• f) carrying the vaporized Cu precursor compound blend with a helium carrier gas flow of approximately 100 sccm;
• g) establishing a distance between the showerhead and the Cu-receiving surface of approximately 20 mm;
• h) volatilizing the Cu precursor compound blend;
• i) flowing the Cu precursor compound blend at a liquid precursor flow rate in the range of approximately 0.15 mL/min;
• j) carrying water vapor with a helium gas flow rate of approximately of 5 sccm;
• k) in response to Steps a) through j), forming a Cu seed layer on the Cu-receiving surface;
• and
• l) depositing a second layer of Cu film overlying the Cu seed layer, whereby a thick Cu film with good adhesive qualities is formed.