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US 6,204,172 B1Granted
Low temperature deposition of barrier layers
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
Estimating the term…
Abstract
The present invention provides a method for forming a barrier layer, preferably a conductive barrier layer. According to the present invention, a barrier layer is formed from an organometallic precursor in the presence of an oxidant in a low temperature deposition technique using a platinum containing precursor. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
Claims30
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 300° C. or less.
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor in the presence of an oxidant at a temperature less than about 350° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method of forming an electrode of a capacitor comprising:
- providing a surface of a substrate assembly;
- and
- forming at least one conductive layer on at least a portion of the surface of the substrate assembly, wherein the at least one conductive layer of the electrode is formed from a platinum containing precursor in the presence of an oxidant at a temperature of about 200° C. to about 300° C.
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less;
- providing an oxidant within the reactor chamber;
- and
- supplying a organometallic precursor to the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 300° C. or less, wherein the metal portion of the organometallic precursor is platinum.
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 300° C. or less, wherein the oxidant is selected from the group consisting of oxygen, ozone, N2O , NO, SO3, H2O2, R2O2, and a combination thereof, wherein R is selected from the group consisting of a saturated or unsaturated linear, branched or cyclic hydrocarbon group having about 2 carbon atoms to about 20 carbon atoms.
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 100° C. to about 300° C.
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 300° C. or less and at a pressure of about 0.1 torr to about 100 torr.
A method for use in fabrication of integrated circuits comprising:
- providing a substrate assembly having a surface;
- and
- forming on at least a portion of the surface of the substrate assembly a barrier layer from an organometallic precursor in the presence of an oxidant at a temperature of about 300° C. or less, wherein the organometallic precursor has a flow rate of about 1 sccm to about 1000 sccm and the oxidant has a flow rate of about 1 sccm to about 5000 sccm.
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming on at least a portion of the surface of the substrate assembly a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor in the presence of an oxidant at a temperature less than about 300° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor in the presence of an oxidant at a temperature less than about 350° C. and at a pressure of about 0.1 torr to about 100 torr, wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor at a flow rate of about 1 sccm to about 1000 sccm in the presence of an oxidant a flow rate of about 1 sccm to about 5000 sccm at a temperature less than about 350° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor in the presence of an oxidant at a temperature less than about 350° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode wherein the dielectric material is selected from the group of TaO5, BaxSr(1−x)TiO3, BaTiO3, SRTiO3, PbTiO3, Pb(Zr,Ti)O3, (Pb,La)(Zr,Ti)O3, (Pb,La)TiO3, KNO3, LiNbO3, and a combination thereof;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly, wherein the surface of the substrate assembly comprises a material selected from the group of silicon, silicone dioxide, BPSG, PSG, TiN, Ti, W, Rh, Ru, Ir, RhO2, RuO2, IrO2, and a combination thereof;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor in the presence of an oxidant at a temperature less than about 350° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method for use in formation of a capacitor on a substrate comprising:
- providing a surface of a substrate assembly;
- forming a first electrode on at least a portion of the surface of the substrate assembly from a platinum-containing organometallic precursor selected from the group of Me(cyclopentadienyl)Pt(Me)3, Pt(PF3)4, Pt(CO)2Cl2, Pt(CH3)2[(CH3)CN], (1,5 cycloctadiene)Pt(CH3)2, (COD)Pt(CH3)Cl, (C5H5)Pt(CH3)(CO), (acetylacetonate)(Pt)(CH3)3, and a combination thereof, in the presence of an oxidant at a temperature less than about 350° C., wherein the first electrode substantially inhibits permeation of oxygen and silicon therethrough;
- forming a high dielectric material over at least a portion of the first electrode;
- and
- forming a second electrode on at least a portion of the high dielectric material.
2 more elements
A method of forming an electrode of a capacitor comprising:
- providing a surface of a substrate assembly;
- and
- forming at least one conductive layer on at least a portion of the surface of the substrate assembly, wherein the at least one conductive layer of the electrode is formed from a platinum containing precursor in the presence of an oxidant at a temperature of about 200° C. to about 300° C., wherein the oxidant is selected from the group consisting of oxygen, ozone, N2O, NO, SO3, H2O2, R2O2, and a combination thereof, wherein R is selected from the group consisting of a saturated or unsaturated linear, branched or cyclic hydrocarbon group having about 1 carbon atom to about 20 carbon atoms.
A method of forming an electrode of a capacitor comprising:
- providing a surface of a substrate assembly;
- and
- forming at least one conductive layer on at least a portion of the surface of the substrate assembly, wherein the at least one conductive layer of the electrode is formed from a platinum containing precursor in the presence of an oxidant at a temperature of about 200° C. to about 300° C. and at a pressure of about 0.1 torr to about 100 torr.
A method of forming an electrode of a capacitor comprising:
- providing a surface of a substrate assembly;
- and
- forming at least one conductive layer on at least a portion of the surface of the substrate assembly, wherein the at least one conductive layer of the electrode is formed from a platinum containing precursor in the presence of an oxidant at a temperature of about 200° C. to about 300° C., wherein the platinum containing precursor has a flow rate of 1 sccm to about 1000 sccm and the oxidant has a flow rate of about 1 sccm to about 5000 sccm.
A method of forming an electrode of a capacitor comprising:
- providing a surface of a substrate assembly;
- and
- forming at least one conductive layer on at least a portion of the surface of the substrate assembly, wherein the at least one conductive layer of the electrode is formed from a platinum containing precursor in the presence of an oxidant at a temperature of about 200° C. to about 300° C., wherein the platinum containing precursor is selected from the group consisting of Me(cyclopentadienyl)Pt(Me)3, Pt(PF3)4, Pt(CO)2Cl2, Pt(CH3)2[(CH3)CN], (1,5 cycloctadiene)Pt(CH3)2, (COD)Pt(CH3)Cl, (C5H5)Pt(CH3)(CO), (acetylacetonate)(Pt)(CH3)3, and a combination thereof.
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less, wherein the surface of the substrate assembly comprises a material selected from the group consisting of silicon, silicone dioxide, BPSG, PSG, TN, Ti, W, Rh, Ru, Ir, RhO2, RuO2, IrO2, and a combination thereof;
- providing an oxidant within the reactor chamber;
- and
- supplying an organometallic precursor to the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less;
- providing an oxidant within the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- and
- supplying to the reactor chamber an organometallic precursor comprising a platinum metallic portion, the organometallic precursor selected from the group consisting of Me(cyclopentadienyl)Pt(Me)3, Pt(PF3)4, Pt(CO)2Cl2, Pt(CH3)2[(CH3)CN], (1,5 cycloctadiene)Pt(CH3)2, (COD)Pt(CH3)Cl, (C5H5)Pt(CH3)(CO), (acetylacetonate)(Pt)(CH3)3, and a combination thereof;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less;
- providing within the reactor chamber an oxidant selected from the group consisting of oxygen, ozone, N2O, NO, SO3, H2O2, R2O2, and a combination thereof, wherein R is selected from the group consisting of a saturated or unsaturated linear, branched or cyclic hydrocarbon group having about 1 carbon atom to about 20 carbon atoms;
- and
- supplying an organometallic precursor to the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 200° C. to about 300° C.;
- providing an oxidant within the reactor chamber;
- and
- supplying a organometallic precursor to the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
A method for forming a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less;
- providing an oxidant within the reactor chamber;
- and
- supplying an organometallic precursor to the reactor chamber, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface at a pressure of about 0.1 torr to about 100 torr.
2 more elements
A method for fonning a conductive barrier layer comprising the steps of:
- providing a substrate including a heated surface in a reactor chamber, wherein the heated surface is about 300° C. or less;
- providing within the reactor chamber an oxidant at a flow rate of about 1 sccm to about 5000 sccm;
- and
- supplying to the reactor chamber an organometallic precursor at a flow rate of about 1 sccm to about 1000 sccm, wherein the organometallic precursor comprises a platinum metallic portion;
- wherein the conductive barrier layer forms on the heated surface.
2 more elements
Dependencies are inferred from the claim text.