Method for making electrical contacts and junctions in silicon carbide
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsStephen D. Russell, Ayax D. Ramirez
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Abstract
A method for making electrical contacts and junctions in silicon carbide that concurrently incorporates and activates dopants from a gaseous ambient. The low temperature processing of the present invention prevents the formation of crystalline defects during annealing and preserves the quantitative chemical properties of the silicon carbide. Improved activation of dopants incorporated in a silicon carbide sample is provided for making the electrical contacts and junctions.
Claims26
A method for making electical contacts in silicon carbinde comprising the following steps:
- disposing a surface of a silicon carbide sample having a first conductivity type into a gaseous ambient containing dopants having the first conductivity type;
- exposing the sample surface to photon energy to melt the sample surface, to dissociate the gaseous ambient, and to diffuse the dopants into the sample;
- and
- recrystallizing the sample surface at a selected temperature thereby activating the dopants diffused into the sample.
A method for making electrical junctions in silicon carbide comprising the following steps:
- disposing a surface of a silicon carbide sample having a first conductivity type into a gaseous ambient containing dopants having a second conductivity type that is opposite to the first conductivity type;
- exposing the sample surface to photon energy to melt the sample surface, to dissociate the gaseous ambient, and to diffuse the dopants into the sample;
- and
- recrystallizing the sample surface at a selected temperature thereby activating the dopants diffused into the sample.
Dependencies are inferred from the claim text.