Methods of forming polished material and methods of forming isolation regions

A method of forming a polished material, comprising:

• providing a substrate and providing an elevational step relative to the substrate, the elevational step having an uppermost surface;
• forming a material beside the elevational step and extending to above the elevational step uppermost surface, the material comprising a lower layer and an upper layer, the upper layer not comprising a material formed from a spin-on glass, the lower layer extending to a level proximate the elevational step uppermost surface and polishing at slower rate than the upper layer under common polishing conditions, the lower layer joining the upper layer at an interface;
• and
• polishing the material down to about the elevational level of the elevational step uppermost surface utilizing the common polishing conditions.

A method of forming a polished material, comprising:

• providing a substrate and providing an elevational step relative to the substrate, the elevational step having an uppermost surface;
• forming a material beside the elevational step and extending to above the elevational step uppermost surface, the material comprising a lower layer and an upper layer, the lower layer polishing at slower rate than the upper layer under common polishing conditions, the lower layer joining the upper layer at an interface;
• and
• polishing the material at least down to the interface utilizing the common polishing conditions.

A method of forming a polished material, comprising:

• providing a substrate and providing an elevational step relative to the substrate, the elevational step having an uppermost surface;
• forming a material beside the elevational step and extending to above the elevational step uppermost surface, the material comprising a lower layer and an upper layer, the lower layer being more dense than the upper layer, the lower layer joining the upper layer at an interface that extends to at or below an elevational level of the elevational step uppermost surface;
• and
• polishing the material at least down to about the elevational level of the elevational step uppermost surface.

A method of polishing a material, comprising:

• providing a substrate having an opening extending therein, the substrate having a surface proximate the opening;
• forming a material within the opening and extending to above the substrate surface, the material comprising a lower layer and an upper layer, one of the lower and upper layers polishing at a slower rate than the other of the lower and upper layers under common polishing conditions, the lower layer joining the upper layer at an interface that extends from above an elevational level of the substrate surface to below said elevational level;
• and
• polishing the material at least at least down to about the elevational level of the substrate surface utilizing the common polishing conditions.

A method of forming a trench isolation region, comprising:

• providing a substrate having a trench opening extending therein, the substrate having a surface proximate the opening;
• forming an insulative material within the opening and extending to above the substrate surface, the material comprising a lower layer and an upper layer, the lower layer polishing at a slower rate than the upper layer under common polishing conditions, the lower layer joining the upper layer at an interface that extends to at or below an elevational level of the substrate surface;
• and
• polishing the material at least down to about the elevational level of the substrate surface utilizing the common polishing conditions.