Method of manufacturing shallow trench isolation
AssigneeUnited Silicon Incorporated
InventorsChun-Liang Liu, Shih-Ming Lan, Hsien-Liang Meng
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Abstract
A method for manufacturing a shallow trench isolation. A substrate is provided, wherein the substrate has a pad oxide on the substrate and a silicon nitride layer on the pad oxide layer, and a trench penetrates through the silicon oxide layer and the pad oxide layer and into the substrate. A first oxide layer is conformally formed on the silicon nitride layer and in the trench. A rapid thermal process is performed. A second oxide layer is formed on the oxide layer to fill the trench. Portions of the first and the second oxide layers are removed to expose the silicon nitride layer.
Claims14
A method of manufacturing a shallow trench isolation in a substrate, the substrate comprising a trench formed by patterning the substrate, a pad oxide layer on the substrate and a silicon nitride layer on the pad oxide, the method comprising the steps of:
- forming a conformal first oxide layer on a surface of the trench and the silicon nitride layer without filling the trench;
- performing a rapid thermal process on the conformal first oxide layer;
- forming a second oxide layer on the first oxide layer to fill the trench;
- and
- removing portions of the first and the second oxide layers to expose the substrate.
A method of manufacturing a shallow trench isolation in a substrate which has a trench formed by patterning the substrate and a silicon nitride layer over the substrate, the method comprising the steps of:
- forming a conformal relatively low O3/TEOS layer on the silicon nitride layer and a surface of the trench;
- performing a rapid thermal process to equalize the etching rate of the relative low O3/TEOS layer and that of the subsequently formed relatively high O3/TEOS layer;
- forming a relatively high O3/TEOS layer on the relatively low O3/TEOS layer to fill the trench;
- and
- removing portions of the relatively high and low O3/TEOS layers to expose the substrate.
A method of manufacturing a shallow trench isolation in a substrate, the method comprising:
- forming a pad oxide layer and a silicon nitride layer on the substrate;
- removing portions of the substrate, the pad oxide layer and the silicon nitride layer to form a trench in the substrate;
- forming a first oxide layer to cover an exposed surface of the trench and th e silicon nitride layer without filling the trench;
- performing a rapid thermal process;
- forming a second oxide layer on the first oxide layer to fill the trench, the second oxide layer having an etching rate similar to that of the first oxide layer;
- and
- performing a chemical mechanical polishing step to remove the first and second oxide layers above the silicon nitride layer;
- and
- removing the silicon nitride layer and the pad oxide layer.
Dependencies are inferred from the claim text.