Method of fabricating shallow trench isolation
AssigneeUnited Microelectronics Corp.
InventorJason J. S. Jenq
Life of this patent
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Abstract
A method of fabricating a shallow isolation. The method comprises the step of forming a pad oxide layer and a mask layer over a substrate in turn. The mask layer is patterned. The pad oxide layer and the substrate are anisotropically etched by using the patterned mask layer as a hard mask in order to form a trench in the substrate. A rapid thermal processing annealing process under the N2 or NH3 is proceeding in order to form a silicon nitride layer on the substrate in the trench. The trench is filled with oxide to form the shallow trench isolation.
Claims17
A method for fabricating a shallow trench isolation structure, comprising:
- providing a substrate;
- forming a pad oxide layer and a mask layer over the substrate;
- patterning the mask layer, the pad oxide layer and the substrate to form a trench in the substrate;
- forming a silicon nitride layer directly on the substrate exposed in the trench;
- forming an insulating layer over the mask layer to fill the trench;
- and
- removing the insulting layer, the mask layer and the pad oxide layer until the substrate is exposed.
A method for fabricating a shallow trench isolation in a substrate, wherein a patterned pad oxide layer and a mask layer are formed on the substrate sequentially, and a trench is formed in the substrate, the method comprising:
- performing a rapid thermal process under a processing gas to form a silicon nitride layer on the substrate exposed in the trench;
- forming an oxide layer over the substrate and to fill the trench;
- and
- removing the oxide layer, the mask layer and the pad oxide layer until the substrate is exposed.
A method to prevent an oxygen molecular penetrating into an active region of an substrate and to reduce residual static charge while forming a shallow trench isolation to isolate the active region of the substrate, comprising:
- performing a rapid thermal process under a processing gas to form a silicon nitride layer on the substrate exposed in the trench.
Dependencies are inferred from the claim text.