Method of manufacturing a deep trench capacitor
AssigneeTaiwan Semiconductor Mfg. Co., Ltd.
InventorChine-Gie Lou
Life of this patent
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Abstract
A method of manufacturing a deep trench capacitor. A first silicon oxide layer is formed on a substrate. A first trench is formed in the substrate. A rugged polysilicon layer is formed on the surface of the first trench. The grains of the rugged polysilicon layer are distributed discretely on surface of the first trench. A second silicon oxide layer is formed on the rugged polysilicon layer. The exposed substrate in the first trench is etched, in order to form a plurality of second trenches in the substrate of the first trench. The first and second silicon oxide layer are removed. A first conductive layer is formed over the substrate and conformal to the first trench and the second trenches. A dielectric layer is formed on the first conductive layer. A second conductive layer is formed on the dielectric layer.
Claims17
A method of manufacturing a deep trench capacitor, comprising:
- forming a first silicon oxide layer on a substrate;
- forming a first trench in the substrate;
- forming a rugged polysilicon layer on a surface of the first trench, wherein the grains of the rugged polysilcon layer distributed discretely on surface of the first trench;
- forming a second silicon oxide layer on the rugged polysilicon layer;
- etching the exposed substrate in the first trench, in order to form a plurality of second trenches in the substrate of the first trench;
- removing the first and second silicon oxide layer;
- forming a first conductive layer over the substrate, wherein the first conductive layer is conformal to the first trench and the second trenches;
- forming a dielectric layer on the first conductive layer;
- and
- forming a second conductive layer on the dielectric layer.
Dependencies are inferred from the claim text.