Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effects
AssigneeAdvanced Micro Devices, Inc.
InventorsSrinath Krishnan, Witold P. Maszara, Ming-Ren Lin
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Abstract
A method of forming a MOSFET device is provided. First lightly doped regions are formed, the first lightly doped regions including LDD extension regions of the device. Second very lightly doped regions are formed at least partially below the first lightly doped regions, respectively, the second very lightly doped regions having a dopant concentration less than the first lightly doped regions, and the second very lightly doped regions being implanted at a higher energy level than the first lightly doped regions.
Claims19
A method of forming a MOSFET device, comprising the steps of:
- forming first lightly doped regions, the first lightly doped regions including LDD extension regions of the device;
- and
- forming second very lightly doped regions at least partially below the first lightly doped regions, respectively, the second very lightly doped regions having a dopant concentration less than the first lightly doped regions, and the second very lightly doped regions being implanted at a higher energy level than the first lightly doped regions, wherein the step of forming the second very lightly doped regions approaches intrinsic level doping.
A method of forming a MOSFET device, comprising the steps of:
- forming first lightly doped regions, the first lightly doped regions including LDD extension regions of the device;
- and
- forming second very lightly doped regions at least partially below the first lightly doped regions, respectively, the second very lightly doped regions having a dopant concentration less than the first lightly doped regions, and the second very lightly doped regions being implanted at a higher energy level than the first lightly doped regions, further including the step of using arsenic at a dopant concentration of about 1×1014 to 1×1016 atoms/cm2 and implanted at an energy range of about 1 KeV to about 100 KeV in forming the first lightly doped regions, and using phosphorus at a dopant concentration of about 1×1012 to 1×1014 atoms/cm2 and implanted at an energy level within the range of 50 KeV to about 200 KeV in forming the second very lightly doped regions.
A method of forming a MOSFET device, comprising the steps of:
- forming first lightly doped regions, the first lightly doped regions including LDD extension regions of the device;
- and
- forming second very lightly doped regions at least partially below the first lightly doped regions, respectively, the second very lightly doped regions having a dopant concentration less than the first lightly doped regions, and the second very lightly doped regions being implanted at a higher energy level than the first lightly doped regions, wherein the step of forming second very light doped regions is performed after a step of forming gate sidewall spacers.
A method of forming an SOI NMOS transistor, comprising the steps of:
- using a separation by implantation of oxygen (SIMOX) process to form a silicon base, an oxide layer between the base and a top silicon layer;
- a silicon substrate;
- an insulating oxide layer formed over the substrate;
- forming N+ source and N+ drain regions in the top silicon layer;
- forming N− lightly doped source and drain extension regions in the top silicon layer;
- and
- forming N− lightly doped source and drain regions, the N− regions having lower dopant concentration than the N− regions, respectively, the N− regions residing below at least portions of the N− regions, respectively;
- wherein the N− regions facilitate mitigating junction capacitance and mitigating floating body effects and short channel effects.
A method of forming a MOSFET device, comprising the steps of:
- forming first lightly doped regions, the first lightly doped regions including LDD extension regions of the device, wherein at least one of Ar and P are used as the dopant for the first lightly doped regions;
- and
- forming second very lightly doped regions at least partially below the first lightly doped regions, respectively, the second very lightly doped regions having a dopant concentration less than the first lightly doped regions, and the second very lightly doped regions being implanted at a higher energy level than the first lightly doped regions, wherein at least one of As and P are used as the dopant for the second very lightly doped regions at a dopant concentration of about 1×1012 to 1'1014 atoms/cm2 and implanted at an energy level within the range of 50 KeV to about 200 KeV.
Dependencies are inferred from the claim text.