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US 6,204,131 B1Granted
Trench structure for isolating semiconductor elements and method for forming the same
AssigneesAnam Semiconductor Inc., Amkor Technology, Inc.
InventorHyun-Dong Shin
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Abstract
A trench structure for isolating semiconductor elements includes a trench formed in a semiconductor substrate; and an insulating layer formed on the semiconductor substrate which fills up the trench, wherein the trench is provided at its bottom surface with at least two grooves which are filled by the insulating layer, whereby a surface area of the trench structure is increased.
Claims6
A method for forming a trench structure for isolating semiconductor elements, comprising:
- forming a shallow groove pattern on a semiconductor substrate;
- etching a portion of the semiconductor substrate where a trench is to be formed surrounding the shallow groove pattern, thereby forming the trench having the shallow groove pattern on a bottom of the trench;
- and
- filling the trench with an insulating material including the shallow groove pattern.
1 more element
Dependencies are inferred from the claim text.