Method of manufacturing bit lines in memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorLing-Sung Wang
Life of this patent
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Abstract
A method of manufacturing the bit lines of memory. The method includes the steps of forming a mask over a substrate, and then patterning the mask layer to form an opening that exposes a portion of the substrate. Thereafter, a portion of the exposed substrate is removed to form a trench in the substrate. Next, the mask layer is removed. Finally, conductive material is deposited into the trench to form a bit line.
Claims20
A method of manufacturing bit lines in a memory, comprising the steps of:
- providing a substrate;
- forming a protective layer over the substrate;
- forming a mask layer over the protective layer;
- patterning the mask layer to form an opening in the mask layer, wherein the opening exposes a portion of the protective layer, but does not expose the substrate;
- while using the mask layer as a hard mask layer, removing a portion of the exposed protective layer and the substrate to form a trench;
- removing the mask layer and the protective layer after the trench is formed;
- and
- depositing conductive material into the trench to form a bit line.
A method for manufacturing mask ROM, comprising the steps of:
- providing a substrate;
- forming a sacrificial layer over the substrate;
- patterning the sacrificial layer to form an opening in the sacrificial layer, wherein the opening exposes a portion of the substrate;
- while using the sacrificial layer as a hard mask layer, removing a portion of the exposed substrate to form a trench;
- removing the sacrificial layer after the trench is formed;
- depositing a conductive layer into the trench to form a bit line;
- and
- forming a word line above the substrate that passes over the bit lines.
A method for manufacturing mask ROM, comprising the steps of:
- providing a substrate;
- forming a plurality of in the substrate;
- depositing conductive material into the trenches to form a plurality of bit lines;
- and
- forming a word line above the substrate that passes over the bit lines.
Dependencies are inferred from the claim text.