Semiconductor wafer pretreatment utilizing ultraviolet activated chlorine
AssigneeAG Associates (Israel) Ltd.
InventorsYitzhak Eric Gilboa, Benjamin Brosilow, Sagy Levy, Hedvi Spielberg, Itai Bransky
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Abstract
Systems and methods are described for semiconductor wafer pretreatment. A method of treating a semiconductor wafer, includes contacting the semiconductor wafer with a mixture including HF and CH3OH; and then contacting the semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of ultraviolet energy. The selective HSG temperature of formation window is widened. In addition, robustness with regard to changes in the reactor ambient and substrate condition, and selectivity with regard to underlying dielectric layers, are both improved.
Claims30
A method of treating a semiconductor wafer having an underlying dielectric layer, said method comprising:
- contacting said dielectric layer of said semiconductor wafer with a mixture including HF and CH3OH;
- and then
- contacting said dielectric layer of said semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of electromagnetic energy.
A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a hemispheric grain silicon material by broadening a selective temperature of formation window for said hemispheric grain silicon material by decreasing a lower temperature endpoint, said method comprising:
- contacting a semiconductor wafer with Cl2 and simultaneously exposing said semiconductor to a source of electromagnetic energy.
A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:
- contacting a semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of electromagnetic energy.
A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature of formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:
- contacting a semiconductor wafer with Cl2 and simultaneously exposing said semiconductor wafer to a source of electromagnetic energy,
- wherein said silicon containing material is selected from the group consisting of amorphous silicon, polycrystalline silicon, SiGe, and SiGeC.
A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature formation window for said silicon containing material by decreasing a lower temperature endpoint, said method comprising:
- exposing a semiconductor wafer to a source of ultraviolet electromagnetic energy.
A method of increasing the selectivity of silicon deposition with regard to an underlying oxide layer during deposition of a silicon containing material by broadening a selective temperature formation window for said silicon containing material by decreasing a lower temperature endpoint said method comprising:
- exposing a semiconductor wafer to a source of ultraviolet electromagnetic energy
- wherein said silicon containing material is selected from the group consisting of amorphous silicon, polycrystalline silicon, SiGe, and SiGeC.
Dependencies are inferred from the claim text.