Method for fabrication an open can-type stacked capacitor on local topology

A method for fabricating a memory array having a plurality of cells, at least a subset of the cells each having an open can-type stacked capacitor fabricated on local topology by:

• forming a conductive layer outwardly of an insulator a first access line and a second access line, the access lines extending from the insulator and spaced apart from each other;
• forming a mask outwardly of the conductive layer;
• forming a first electrode by removing at least part of the conductive layer exposed by the mask, the first electrode comprising an annular sidewall having a first segment disposed on the insulator between the first and second access lines and a second, opposite segment disposed on the first access line;
• forming a dielectric layer outwardly of the first electrode;
• and
• forming a second electrode outwardly of the dielectric layer.

A memory array, comprising:

• an insulator;
• a first access line extending from the insulator;
• a second access line extended from the insulator and spaced apart from the first access line;
• a first electrode comprising an annular sidewall having a first segment disposed between the first and second access lines and a second, opposite segment disposed on the first access line;
• a dielectric layer disposed outwardly of the first electrode;
• and
• a second electrode disposed outwardly of the dielectric layer.