Method for forming multi-layered liner on sidewall of node contact opening
AssigneeUnited Microelectronics Corp.
InventorsKuo-Chi Lin, Kuen-Yow Lin, Chien-Hua Tsai, Kun-Chi Lin
Life of this patent
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Abstract
A method for forming a multi-layered liner on the sidewalls of a node contact opening includes the steps of providing a substrate having a dielectric layer thereon. The dielectric layer further includes a node contact opening that exposes a portion of the substrate. A first liner layer is then formed on the sidewalls of the node contact opening. Next, a second liner layer is formed over the first liner layer such that the first liner layer and the second liner layer together form a dual-layered liner. The first liner layer in contact with the dielectric layer has good insulation capacity while the second liner layer has good etch-resisting property.
Claims22
A method for forming a multi-layered liner on the sidewalls of a node contact opening comprising the steps of:
- providing a substrate having a dielectric layer thereon, wherein the dielectric layer further includes a node contact opening that exposes a portion of the substrate;
- forming a first liner layer on the sidewalls of the node contact opening;
- and
- forming a second liner layer over the first liner layer.
A method for forming a multi-layered liner on the sidewalls of a node contact opening, comprising the steps of:
- providing a substrate having a node contact opening thereon;
- forming an insulating liner layer on the sidewalls of the node contact opening;
- and
- forming an etch-resistant liner layer over the insulating liner layer.
A node contact opening having a multi-layered liner structure, comprising:
- a substrate;
- a dielectric layer above the substrate, wherein the dielectric layer has a node contact opening that exposes a portion of the substrate;
- a first liner layer on the sidewalls of the node contact opening;
- and
- a second liner layer over the first liner layer.
A node contact opening having a multi-layered liner structure, comprising:
- a substrate;
- a dielectric layer above the substrate, wherein the dielectric layer has a node contact opening that exposes a portion of the substrate;
- an insulating liner layer on the sidewalls of the node contact opening;
- and
- an etch-resistant liner layer over the insulating liner layer.
Dependencies are inferred from the claim text.