Method of producing a thin-film platinum temperature-sensitive resistor for a thin-film microstructure sensor
AssigneesRicoh Company, Ltd., Ricoh Elemex Corporation
InventorsHiroyoshi Shoji, Takayuki Yamaguchi, Junichi Azumi, Yukito Sato, Morimasa Kaminishi
Life of this patent
Estimating the term…
Abstract
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 Å. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
Claims3
A method of producing a thin-film platinum temperature-sensitive resistor for a thin-film microstructure sensor, said method comprising the steps of:
- forming a first insulation layer on a substrate;
- forming a platinum layer on the first insulation layer of the substrate by a sputtering process;
- forming a second insulation layer on the platinum layer;
- and
- performing a patterning of the platinum layer through etching by using the second insulation layer as a mask, so that a thin-film platinum temperature-sensitive resistor is produced on the first insulation layer of the substrate,
- wherein said sputtering process is performed under sputtering conditions in which a radio-frequency power is set in a range of 0.54 W/cm2 to 2.74 W/cm2 and a temperature of the substrate is set in a range of 100° C. to 500° C. in such a manner that a maximum crystal grain size of the platinum layer is above 800 Å.
A method of producing a thin-film platinum temperature-sensitive resistor for a thin-film microstructure sensor, said method comprising the steps of:
- forming a first insulation layer on a substrate;
- forming a platinum layer on the first insulation layer of the substrate by a sputtering process;
- forming a second insulation layer on the platinum layer;
- and
- performing a patterning of the platinum layer through etching by using the second insulation layer as a mask, so that a thin-film platinum temperature-sensitive resistor is produced on the first insulation layer of the substrate,
- wherein said sputtering process is performed under sputtering conditions in which a radio-frequency power is set in a range of 0.54 W/cm2 to 2.74 W/cm2 and a temperature of the substrate is set in a range of 100° C. to 500° C. in such a manner that the thin-film platinum temperature-sensitive resistor provides a temperature coefficient of resistance TCR above 3200 ppm.
Dependencies are inferred from the claim text.