Chemical mechanical polishing methods

Abstract

In one implementation, a chemical mechanical polishing method includes providing a workpiece having a dielectric region to be polished. A first chemical mechanical polishing of the dielectric region is conducted on the workpiece using a polishing pad and a first slurry. Then, a second chemical mechanical polishing is conducted of the dielectric region on the workpiece using the polishing pad and a second slurry different from the first slurry. In one implementation, a chemical mechanical polishing method includes providing a workpiece having a dielectric region to be polished. The dielectric region has a thickness ultimately desired to removed by polishing prior to moving the workpiece on to a subsequent nonpolishing processing step. A first chemical mechanical polishing of the dielectric region is conducted on the workpiece using a first slurry. Then, a second chemical mechanical polishing of the dielectric region is conducted on the workpiece using a second slurry different from the first slurry. The second chemical mechanical polishing removes at least 15% of the thickness.

Dependencies are inferred from the claim text.