Polishing polymer surfaces on non-porous CMP pads
AssigneeMicron Technology, Inc.
InventorsGuy F. Hudson, Michael A. Walker
Life of this patent
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Abstract
Methods of oxidizing the surface of a photoresist material on a semiconductor substrate to alter the photoresist material surface to be substantially hydrophillic. Oxidation of the photoresist material surface substantially reduces or eliminates stiction between a planarizing pad and the photoresist material surface during chemical mechanical planarization. This oxidation of the photoresist material may be achieved by oxygen plasma etching or ashing, by immersing the semiconductor substrate in a bath containing an oxidizing agent, or by the addition of an oxidizing agent to the chemical slurry used during planarization of the resist material.
Claims42
A method of planarizing an oxidizable material layer on a semiconductor substrate, comprising:
- providing a semiconductor substrate having thereon an oxidizable material layer of a depth;
- oxidizing an exposed surface portion of said oxidizable material layer in a first environment to a depth less than the depth of the oxidizable material layer;
- and
- planarizing said exposed oxidized surface portion of said oxidizable material layer in a second, differing environment so as to subtantially remove said depth of said oxidized exposed surface of said oxidizable material layer.
A method of planarizing a semiconductor substrate coated with an organic film resist comprising:
- oxidizing an exposed surface of said organic film resist;
- and
- planarizing said semiconductor substrate by a chemical mechanical planarization technique.
A method of planarizing a semiconductor substrate coated with an organic film resist comprising:
- oxidizing an exposed surface of said organic film resist;
- mounting said semiconductor substrate in a rotatable substrate carrier;
- contacting said semiconductor substrate with a chemical mechanical planarization pad;
- and
- rotating said substrate carrier to planarize said semiconductor substrate.
A method of planarizing an oxidizable material layer on a semiconductor substrate, comprising:
- providing a semiconductor substrate having thereon an oxidizable material layer of a depth;
- oxidizing an exposed surface portion of said oxidizable material layer to a depth less than the depth of the oxidizable material layer;
- discontinuing said oxidizing an exposed surface portion of said oxidizable material once said depth of less than the depth of the oxidizable material layer has been reached;
- and
- planarizing said oxidized exposed surface portion of said oxidizable material layer so as to substantially remove said oxidized exposed surface portion.
Dependencies are inferred from the claim text.