Precursor solution compositions for electronic devices using CCVD
AssigneeMorton International, Inc.
InventorsAndrew T. Hunt, Tzyy Jiuan Hwang, Helmut G. Hornis, Hong Shao, Joe Thomas, Wen-Yi Lin, Shara S. Shoup, Henry A. Luten, John Eric McEntyre
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Abstract
Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.
Claims21
A precursor solution for forming an electrically resistive material, which, when subject to either combustion chemical vapor deposition or controlted atmosphere chemical vapor deposition yields a conductive metal oxide having sufficient electrical resistivity to be used as a resistor,
- said solution comprising precursor chemical compounds for the non-oxygen elements of said conductive metal oxide, said precursor chemical compounds being provided in a relative ratio so as to form the conductive metal oxide under conditions of either combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition, plus
- an additional precursor chemical compound dissolved in said solution, which additional precursor chemical compound when subject to either combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition yields a dielectric metal oxide or metalloid oxide, which metal oxide or metalloid oxide decreases the conductivity of said conductive metal oxide.
A precursor solution for forming an electrically resistive material, which, when subject to either combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition yields a conductive metal oxide having sufficient electrical resistivity to be used as a resistor,
- said solution comprising precursor chemical compounds for the non-oxygen elements of said conductive metal oxide, said precursor chemical compounds being provided in a relative ratio so as to form said conductive metal oxide under conditions of either combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition, plus
- an additional precursor chemical compound dissolved in said solution, which additional precursor chemical compound when subject to either combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition yields a conduction-enhancing material.
Dependencies are inferred from the claim text.