Lateral IGBT in an SOI configuration and method for its fabrication
AssigneeSiemens Aktiengesellschaft
InventorsMichael Stoisiek, Dirk Vietzke
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Abstract
A lateral IGBT in an SOI configuration having a top side and an underside is proposed. The lateral IGBT has a drain zone extending to the top side and is of a first conductivity type. The underside of the LIGBT forms a substrate of a second conductivity type. A lateral insulation layer is situated between the substrate and the drain zone. At least one laterally formed region of the second conductivity type is situated in the drain zone, in the vicinity of the lateral insulation layer. These laterally formed regions being spaced apart from one another lying in one plane.
Claims16
A lateral insulated gate bipolar transistor (IGBT) in a silicon on insulator (SOI) configuration having a top side and an underside, comprising:
- a drain zone of a first conductivity type extending to the top side;
- an anode zone of a second conductivity type incorporated in said drain zone and extending to the top side;
- a base zone of the second conductivity type incorporated in said drain zone and extending to the top side;
- a source zone of the first conductivity type incorporated in said base zone and extending to the top side;
- a substrate of the second conductivity type forming the underside;
- a source electrode disposed in contact with said source zone and said base zone;
- a drain electrode disposed in contact with said anode zone;
- a gate insulating layer disposed on the top side between said source zone and said anode zone;
- a gate electrode disposed on said gate insulating layer;
- a lateral insulation layer disposed between said drain zone and said substrate;
- and
- at least one laterally formed region of the second conductivity type disposed in said drain zone in a vicinity of said lateral insulation layer.
Dependencies are inferred from the claim text.