Semiconductor device with decoupling capacitance
AssigneeInternational Business Machines Corporation
InventorsEdward Joseph Nowak, Minh Ho Tong
Life of this patent
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Abstract
A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.
Claims16
An apparatus comprising:
- a first circuit region having a first device layer over an isolation layer;
- a second circuit region adjacent the first circuit region having a second device layer over a well of a first polarity type;
- and
- an implant layer of the first polarity type implanted beneath the isolation layer, the implant layer having a distinct doping characteristic from the well, and wherein the implant layer is connected to the well and entirely separates the well from the isolation layer.
A semiconductor device comprising:
- a substrate;
- a first circuit region in the substrate having an isolation layer beneath a first device formed in the substrate and an implant layer beneath the isolation layer, said implant layer having a first doping characteristic;
- and
- a second circuit region in the substrate adjacent the first region with a second device formed therein, said second circuit region having a well with a second doping characteristic different than the first doping characteristic;
- and
- wherein the implant layer is electrically coupled to the well, and
- wherein the implant layer entirely separates the well from the isolation layer.
In an apparatus having a bulk device region adjacent an SOI device region, the improvement comprising:
- an implant layer beneath an isolation layer in the SOI device region, said implant layer having a first doping characteristic, and connected to a well having a second doping characteristic different than the first doping characteristic and located beneath the bulk device region, and
- wherein the implant layer entirely separates the well from the isolation layer.
Dependencies are inferred from the claim text.