Method of treating surface of sample

An etching method, comprising:

• providing a material having thereon a multi-layer film composed of a lamination of a semiconductor film and a metallic film;
• and
• etching said multi-layer film, including the metallic film and the semiconductor film, with a plasma of a halogen-containing gas, wherein said material having said multi-layer film thereon is kept at a temperature over 100° C. when said metallic film is being etched, and said material is kept at a temperature below 80° C. when said semiconductor film is being etched.

An etching method, comprising:

• providing a material having thereon a multi-layer film composed of a lamination of a semiconductor film, a barrier film, and a metallic film;
• and
• etching said multi-layer film with a plasma of a halogen-containing gas, wherein the material having said multi-layer film thereon is kept at a temperature between 100° C. and 200° C. during etching of said metallic film and said barrier film, and said material is kept at a temperature of 0° C. to 80° C. during etching of said semiconductor film.

An etching method, comprising:

• providing a material having thereon a multi-layer film composed of a lamination of a semiconductor film, a barrier film, and a metallic film;
• and
• etching said multi-layer film, including said metallic film, said barrier film and said semiconductor film, with a plasma of a halogen-containing gas, wherein said material having said multi-layer film thereon is placed on a first worktable maintained at a temperature over 100° C. in a first processing chamber when the metallic film and barrier film are being etched, followed by transferring the material into a second processing chamber through a buffer chamber evacuated for vacuum to allow etching of said semiconductor film, the material being placed on a second worktable maintained at a temperature below 80° C. in said second processing chamber.

An etching method, comprising:

• providing a material having thereon a multi-layer film composed of a lamination of a semiconductor film, a barrier film, and a metallic film;
• and
• etching said multi-layer film, including the semiconductor film, the barrier film and the metallic film, with a plasma of a halogen-containing gas, wherein the material having said multi-layer film thereon is placed on a first worktable maintained at a temperature between 100° C. and 200° C. in a first processing chamber during etching of the metallic film and the barrier film, followed by transferring the material into a second processing chamber through a buffer chamber evacuated for vacuum to allow etching of said semiconductor film, the material being placed on a second worktable maintained at a temperature between 0° C. and 80° C. in said second processing chamber.