Method of fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorKuan-Yang Liao
Life of this patent
Estimating the term…
Abstract
A method of fabricating semiconductor device. First, a masking layer having an opening pattern is formed on a material layer, and then a mask spacer is formed on the sidewall of the opening. The opening is filled with an insulating layer to cover the material layer exposed by the opening. The masking layer and the mask spacer are removed, allowing the remaining insulating layer to be a mask for defining a pattern of the material layer. Then, the material layer not covered by the insulating layer is removed. The insulating layer is removed again to expose the patterned material layer.
Claims20
A method of fabricating a semiconductor device, comprising the steps of:
- forming a material layer on a substrate;
- forming a masking layer on the material layer, wherein the masking layer has an opening to expose the material layer;
- forming a mask spacer on a sidewall of the opening;
- filling an insulating layer in the opening to cover the material layer exposed by the opening and to cover at least a portion of the mask spacer;
- removing the mask layer and the mask spacer;
- removing the material layer uncovered by a bottom of the insulating layer;
- and
- removing the insulating layer.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a conductive layer on a substrate;
- forming a masking layer on the conductive layer, the masking layer having an opening which exposes the conductive layer, wherein the opening has a first linewidth;
- forming a mask spacer on a sidewall of the opening;
- filling an insulating layer in the opening to cover the conductive layer exposed by the opening and to cover at least a portion of the mask spacer;
- removing the masking layer and the mask spacer;
- removing the conductive layer uncovered by a bottom of the insulating layer, so that a gate with a second linewidth which is smaller than the first linewidth is defined;
- and
- removing the insulating layer.
Dependencies are inferred from the claim text.