Method for producing a Schottky diode assembly formed on a semiconductor substrate

A method for producing a Schottky diode assembly, which comprises:

• forming a semiconductor substrate with a main surface, a semiconductor region having a first conductivity type and a metal layer disposed adjacently on the semiconductor region;
• forming a Schottky junction between the semiconductor region having the first conductivity type and the metal layer;
• providing the Schottky junction with a peripheral region, a protective structure on the peripheral region, and a doped region of the protective structure having a second conductivity type of opposite polarity from the first conductivity type and extending from the main surface to a predetermined depth into the semiconductor substrate;
• and
• forming the doped region with at least two different first and second doped portions disposed one below the other relative to the main surface by constructing the first doped portion at a greater depth and with a comparatively lesser doping and constructing the second doped portion with a comparatively higher doping and a lesser depth adjacent the main surface.