Method of fabricating shallow trench isolation using high density plasma CVD
AssigneeUnited Semiconductor Corp.
InventorChih-Hsiang Hsiao
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Abstract
A method of fabricating a shallow trench isolation includes formation of a trench in a substrate. A high-density plasma chemical vapor deposition is performed with a plasma which does not contain argon gas. A liner oxide layer is formed on the substrate exposed in the trench. Another high-density plasma chemical vapor deposition is performed. A silicon oxide layer is formed. Then, some follow-up steps are performed to complete the shallow trench isolation.
Claims12
A method of fabricating a shallow trench isolation in a substrate, comprising the steps of:
- patterning the substrate to form a trench therein;
- performing a first high-density plasma chemical vapor deposition with a plasma which does not containing argon gas to form a liner oxide layer over the substrate, wherein the liner oxide layer is conformal to a peripheral surface of the trench;
- and
- forming a silicon oxide layer on the liner oxide layer to fill the trench by performing a second high-density plasma chemical vapor deposition with an argon flow rate of about 50 sccm to about 400 sccm.
A method of fabricating a shallow trench isolation, comprising the steps of:
- forming a pad oxide layer and a mask layer on a substrate;
- patterning the pad oxide layer, the mask layer, and the substrate to form a trench in the substrate;
- performing a first high-density plasma chemical vapor deposition with a plasma which does not containing argon gas to form a liner oxide layer over the substrate, wherein the liner oxide layer is conformal to a peripheral surface of the trench;
- and
- forming a silicon oxide layer on the liner oxide layer to fill the trench by performing a second high-density plasma chemical vapor deposition with an argon flow rate of about 50 sccm to about 400 sccm.
Dependencies are inferred from the claim text.