Method of fabricating shallow trench isolation structure
AssigneeUnited Microelectronics Corp.
InventorsKun-Lin Wu, Cheng-Jung Hsu
Life of this patent
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Abstract
A method of fabricating shallow trench isolation. A silicon oxide layer is formed on a substrate. The silicon oxide layer is patterned and a portion of the substrate is removed to form a trench within the substrate. A liner oxide layer is formed on the sidewall of the trench. An insulating layer is formed on the substrate and filled in the trench. A portion of the insulating layer is removed by CMP to expose the silicon oxide layer. The silicon oxide layer is removed and the STI structure is completed.
Claims14
A method of fabricating shallow trench isolation, comprising:
- providing a substrate;
- forming a silicon oxide layer on the substrate;
- forming a trench within the substrate by patterning the silicon oxide layer and the substrate;
- forming an insulating layer over the substrate and filling the trench;
- removing a portion of the insulating layer to expose the silicon oxide layer;
- removing the silicon oxide layer;
- and
- wherein the method recited above does not include forming any nitride layer.
A method of fabricating shallow trench isolation wherein a substrate is provided, comprising:
- forming a silicon oxide layer on the substrate;
- patterning the silicon oxide layer and removing a portion of the substrate to form a trench within the substrate;
- forming a liner oxide layer on a sidewall of the trench;
- forming an insulating layer over the substrate for filling the trench;
- planarizing the insulating layer by CMP to expose the silicon oxide layer;
- removing the silicon oxide layer;
- and
- wherein the method recited above does not include forming of silicon nitride layer.
A method of fabricating shallow trench isolation in a substrate, comprising:
- forming a first oxide layer on the substrate;
- forming the first oxide layer and the substrate so that a trench is formed in the substrate;
- forming a second oxide layer on a sidewall of the trench;
- forming a third oxide layer directly on the first and second oxide layers for filling the trench;
- planarizing the third oxide layer by CMP until the first oxide layer is exposed;
- and
- removing the first oxide layer.
Dependencies are inferred from the claim text.