Method for fabricating a capacitor

A method for fabricating a capacitor, which comprises the following steps:

• providing a substrate with a silicon-containing oxide layer formed from a material selected from the group consisting of TEOS and silicon nitride;
• providing a barrier layer on the oxide layer, and an electrode layer on the barrier layer;
• performing an etching process including etching, region by region, the electrode layer and the barrier layer, for forming at least one electrode of a capacitor;
• during the etching process allowing the oxide layer underneath the barrier layer to be attacked up to a predetermined degree and allowing etching residues from the barrier layer to be formed at least in an edge region of the barrier layer;
• CVD-depositing at least one metal in an oxidizing atmosphere and at a given deposition temperature to form a metal oxide layer, and thereby producing in situ a substantially amorphous passivation edge web from the etching residues and the at least one metal, in the course of the CVD deposition, laterally of the barrier layer between the barrier layer and the metal oxide layer.