Method of forming power semiconductor devices having overlapping floating field plates for improving breakdown voltage capability

A method of forming a semiconductor device having overlapping floating field plates, comprising the steps of:

• forming an electrically insulating region on a face of a semiconductor substrate containing a region of first conductivity type therein extending to the face;
• patterning the electrically insulating region to expose the face;
• oxidizing the exposed face not covered by the patterned electrically insulating region to form a pad oxide having a thickness less than a thickness of the electrically insulating region;
• patterning a first conductive region on an upper surface of the patterned electrically insulating region and on the upper surface of the pad oxide region to define a primary field plate on the pad oxide and on the patterned electrically insulating region, a first and a second floating field plate extensions on the patterned electrically insulating region and spaced apart from each other and from the primary field plate;
• placing impurities of second conductivity type into the face of the substrate to form a region of second conductivity type in the exposed substrate so as to overlap a portion of the patterned first conductive region with interposing the pad oxide therebetween using the patterned first conductive region and the patterned electrically insulating region as masks;
• forming a first dielectric region on the patterned electrically insulating region, the patterned first conductive region and the exposed region of second conductivity type;
• patterning the first dielectric region to define vias exposing the first primary field plate, the first and second floating field plate extensions, the vias exposing the first primary field plate also exposing a portion of the region of second conductivity type;
• forming a second conductive region on an upper surface of the patterned first dielectric region and in the vias;
• patterning the second conductive region to form a contact electrode, a first floating field plate and a second floating field plate, the contact electrode being in contact with the portion of the region of second conductivity type and the first primary field plate, the first floating field plate extending opposite an upper surface of the primary field plate and being in contact with the first floating field plate extension, the second floating field plate being in contact with the second floating field plate extension, respectively;
• and
• forming a semiconductor device in the semiconductor substrate, the device comprising the region of second conductivity type which extends to the face, forms a P-N junction with the region of first conductivity type, and is electrically connected to the primary field plate through the contact electrode and capacitively coupled to the first floating field plate.