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US 6,190,837 B1Granted
Method for forming photoresist film pattern
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsJae Chang Jung, Hyang Gi Kim
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Abstract
A method for forming a fine pattern on a wafer substrate via a silylation process, by which one photoresist film can be used irrespective of light sources including KrF (248 nm) and ArF (193 nm) and a positive pattern with a positive pattern as small as 0.18 μm in size can be obtained.
Drawings
Claims12
A method for forming a fine photoresist film pattern, comprising the steps of:
- coating a photoresist film on a layer to be etched and exposing a certain depth of the photoresist film through a mask to a light beam, said photoresist film comprising a resin, a photoacid generator and base;
- subjecting the photoresist film to post-exposure bake, to remove the base in the exposed region through the reaction of acid and base;
- silylating the photoresist film with a material containing a H—Si bond, to create a Si—O-resin bond in the unexposed region with the aid of a catalytic action of the base which remains therein but no Si—O-resin bond in the exposed region;
- and
- etching the exposed region of the photoresist film by use of plasma, said Si—O-resin contained in the unexposed region of the photoresist film combined with oxygen to form a silicon oxide which serves as an etch barrier.
2 more elements
A method for forming a fine photoresist film pattern, comprising the steps of:
- coating a photoresist film on a layer to be etched;
- exposing a certain depth of the photoresist film through a mask to a light beam, said photoresist film comprising a resin, a photoacid generator and a base which is selected from the group consisting of aliphatic amines, hydroxides and alkoxides;
- subjecting the photoresist film to post-exposure bake, to remove the base in the exposed region through the reaction of acid and base;
- silylating the photoresist film with a material containing a H—Si bond, to create a Si—O-resin bond in the unexposed region with the aid of a catalytic action of the base which remains therein but no Si—O-resin bond in the exposed region;
- and
- etching the exposed region of the photoresist film by use of O2 plasma, said Si—O-resin bond contained in the unexposed region of the photoresist film combined with oxygen to form a silicon oxide which serves as an etch barrier.
3 more elements
Dependencies are inferred from the claim text.