Device for reducing plasma etch damage and method for manufacturing same

A device for reducing plasma etch damage occurring after the deposition of a first metallization layer, comprising:

• a sputter etch chamber having an rf-powered cathode and a grounded anode;
• a semiconductor wafer having an n-type substrate electrically retained against said cathode by at least three retainers, each said retainer is spaced from said anode;
• a plurality of active regions including p-channel transistors formed within said n-type substrate, each said p-channel transistor having a gate channel region formed between a source and drain;
• at least three p-doped areas formed within said n-type substrate at inactive regions of said n-type substrate to form at least three diodes near the outer periphery of said wafer and underneath each said retainer, each said diode includes an interface between said p-doped area and said n-type substrate;
• and
• said interface between said p-doped area and said n-type substrate substantially prevents transfer of charge between said grounded anode and said gate channel region during activation of said sputter etch chamber.

A device for electrical connection to a sputter etch chamber for reducing plasma etch damage occurring after the deposition of a first metallization layer, comprising:

• a sputter etch chamber having an anode and an rf-powered cathode;
• a semiconductor wafer having a plurality of p-channel transistors and associated gate channel regions formed within an n-type substrate;
• at least three retainers spaced from said anode for retaining said wafer against said cathode;
• and
• a diode connected between a ground terminal and said anode, said diode is configured for substantially preventing transfer of charge between said grounded anode and said gate channel region during activation of said sputter etch chamber.