Device for limiting alternating electric currents, in particular in the event of a short circuit

A device for limiting an alternating electric current, comprising:

• a passive semiconductor configuration connected into a current path of an alternating current;
• said passive semiconductor configuration including a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, and a second electrode;
• said first and second electrodes being connected to said first semiconductor region;
• said first semiconductor region having at least one depletion zone and a channel region provided in the current path between said first electrode and said second electrode, said channel region being pinched off by said at least one depletion zone when a saturation current is reached;
• said first semiconductor region having a surface, said third semiconductor region being disposed at said surface of said first semiconductor region, said at least one depletion zone including a first depletion zone being a p-n junction depletion zone formed between said first semiconductor region and said third semiconductor region;
• a contact region disposed at said surface of said first semiconductor region, said contact region ohmically contacting said first electrode to said first semiconductor region, said first electrode contacting said third semiconductor region at a given surface thereof, said given surface of said third semiconductor region not adjoining said first semiconductor region;
• said second semiconductor region being provided within said first semiconductor region underneath said contact region and extending in directions parallel to said surface of said first semiconductor region beyond said contact region;
• said at least one depletion zone including a second depletion zone being a further p-n junction depletion zone provided between said first semiconductor region and said second semiconductor region;
• and
• a protection circuit connected to said passive semiconductor configuration and having diodes, said protection circuit preventing said passive semiconductor configuration from being driven to a reverse breakdown voltage by the alternating current.

A device for limiting an alternating electric current, comprising:

• a passive semiconductor configuration connected into a current path of an alternating current;
• said passive semiconductor configuration including a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, and a second electrode;
• said first and second electrodes being connected to said first semiconductor region;
• said first semiconductor region having at least one depletion zone and a channel region provided in the current path between said first electrode and said second electrode, said channel region being pinched off by said at least one depletion zone when a saturation current is reached;
• said first semiconductor region having a surface, said third semiconductor region being disposed at said surface of said first semiconductor region, said at least one depletion zone including a first depletion zone being a p-n junction depletion zone formed between said first semiconductor region and said third semiconductor region;
• a contact region disposed at said surface of said first semiconductor region, said contact region ohmically contacting said first electrode to said first semiconductor region;
• said second semiconductor region being provided within said first semiconductor region underneath said contact region and extending in directions parallel to said surface of said first semiconductor region beyond said contact region;
• said at least one depletion zone including a second depletion zone being a further p-n junction depletion zone provided between said first semiconductor region and said second semiconductor region;
• said third semiconductor region has a given surface not adjoining said first semiconductor region;
• an insulator region covering said given surface of said third semiconductor region for storing charges in said third semiconductor region;
• and
• a protection circuit connected to said passive semiconductor configuration and having diodes, said protection circuit preventing said passive semiconductor configuration from being driven to a reverse breakdown voltage by the alternating current.