Semiconductor arrangement preventing damage during contact processing
AssigneeInternational Business Machines Corporation
InventorsGregory S. Boettcher, Robert P. Katz, Ashwani K. Malhotra, James Wood
Life of this patent
Estimating the term…
Abstract
A semiconductor arrangement having a first active region and a dummy region on a surface of a substrate. The first active region and the dummy region are spaced from one another without any contact, and the dummy region is closer to an edge of the surface of the substrate in comparison to the first active region. Formed on the dummy region, first active region, and a portion of the substrate surface is a dielectric layer. The surface of the dielectric layer has an inactive portion and an active portion. A mask is disposed on the dielectric layer such that the mask contacts the inactive portion and does not contact the active portion.
Claims20
A semiconductor arrangement comprising:
- a substrate having a surface and an edge;
- a first active region disposed on the surface of the substrate;
- a dummy region disposed on the surface of the substrate, spaced from the first active region without any contact, and located closer to the edge of the substrate than is the first active region;
- a dielectric layer disposed on the first active region, the dummy region, and a portion of the surface of the substrate which is not covered by the first active region and the dummy region, the dielectric layer having a surface with an inactive portion and an active portion;
- and
- mask disposed on the dielectric layer such that the mask contacts the inactive portion and does not contact the active portion.
A process of producing a semiconductor arrangement, the process comprising the steps of:
- (a) forming a first active region and a dummy region on a surface of a substrate, such that:
- (i) the first active region and the dummy region are spaced from one another without any contact, and
- (ii) the dummy region is closer to an edge of the surface of the substrate in comparison to the first active region;
- (b) forming a dielectric layer on the first active region, the dummy region, and a portion of the surface of the substrate which is not covered by the first active region and the dummy region, the dielectric layer having a surface with an inactive portion and an active portion;
- and
- (c) applying a mask on the dielectric layer such that the mask contacts the inactive portion and does not contact the active portion.
A semiconductor arrangement produced by the steps of:
- (a) forming a first active region and a dummy region on a surface of a substrate, such that:
- (i) the first active region and the dummy region are spaced from one another without any contact, and
- (ii) the dummy region is closer to an edge of the surface of the substrate in comparison to the first active region;
- (b) forming a dielectric layer on a portion of the surface of the substrate which is not covered by the first active region and the dummy region, the dielectric layer covering the first active region and the dummy region and having a surface with an inactive portion and an active portion;
- and
- (c) applying a mask on the dielectric layer such that the mask contacts the inactive portion and does not contact the active portion.
Dependencies are inferred from the claim text.