Buried capacitor for silicon-on-insulator structure
AssigneeInternational Business Machines Corporation
InventorsBijan Davari, Effendi Leobandung, Werner Rausch, Ghavam G. Shahidi
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Abstract
A process for making a capacitor for a silicon-on-insulator (SOI) structure. The SOI structure has a p-type silicon base layer, a buried oxide layer, a silicon layer, and an n+ layer formed within a portion of the p-type silicon base layer. The process comprises the steps of forming a buried oxide layer and a silicon layer in the p-type silicon base layer, forming an n+ layer in a portion of the p-type silicon base layer, and forming electrically conductive paths to the p-type silicon base layer and the n+ layer extending through the buried oxide and silicon layers.
Claims8
A silicon-on-insulator structure comprising:
- a p-type silicon base layer having formed thereon a buried oxide layer and an active silicon layer of a transistor on said buried oxide layer;
- an interlayer insulation disposed on said active silicon layer;
- an n+ layer formed within a portion of said p-type silicon base layer;
- and
- electrically conductive paths extending through said interlayer insulation and said buried oxide layer to said p-type silicon base layer and said n+ layer, respectively.
A silicon-on-insulator structure having an exposed top surface, said silicon-on-insulator structure comprising:
- a p-type silicon base layer having a top surface;
- a buried oxide layer formed on said top surface of said p-type silicon base layer;
- a silicon layer formed on said buried oxide layer;
- an n+ layer formed within a portion of said p-type silicon base layer and having a top surface substantially co-linear with said top surface of said p-type silicon base layer, said n+ layer contacting said buried oxide layer;
- an active device formed in said silicon layer above said n+ layer;
- and
- an interlayer insulation disposed on said active device;
- electrically conductive paths extending through said interlayer insulation surface and buried oxide layer to said p-type silicon base layer and said n+ layer, respectively.
Dependencies are inferred from the claim text.