Integration of isolation with epitaxial growth regions for enhanced device formation
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, H. Jim Fulford, Jr.
Life of this patent
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Abstract
A method of forming integrated isolation regions and active regions includes first forming a plurality of dielectric layers upon a semiconductor substrate. Then, a patterned mask is applied to define portions of the dielectric layers that will remain to form isolation regions and to define portions of the dielectric layers that will be removed in an etch step to create voids to the surface of the semiconductor substrate. Subsequently, epitaxially growth is employed to form active regions within the voids that were previously formed. Transistors are then formed in and on the active regions and are subsequently interconnected to form an integrated circuit.
Claims15
An integrated circuit formed on a substrate having integrated isolation regions and active regions, the integrated circuit comprising:
- a plurality of isolation regions formed upon the substrate from a first dielectric layer residing upon the substrate and a second dielectric layer that resides upon the first dielectric layer;
- epitaxially grown active regions that have been grown upon the substrate and that are defined by voids that were etched from the first dielectric layer and the second dielectric layer and that also define the plurality of isolation regions, the sidewalls of the epitaxially grown active regions oriented substantially perpendicular to the surface of the substrate;
- an ion implant layer residing at the junction between the epitaxially grown active regions and the substrate, the ion implant layer preventing dopant diffusion from the substrate to the epitaxially grown active regions;
- and
- a plurality of transistors formed in and on the epitaxially grown active regions.
Dependencies are inferred from the claim text.