Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device

Abstract

The present invention is a fabrication process and structure of a negative-differential-resistance device characterized by triple negative-differential-resistance at room temperature and hexad negative-differential-resistance at a low temperature (−105° C.). The component parts are, from bottom upward, a substrate made of GaAs material, a first layer made of GaAs material, a second layer made of InGaAs (InxGa1−xAs) material, a third layer made of AlGaAs material, and a metallic coating by vaporization on the third layer. Of the three layers, the second one is a varied layer composed of our successively varied laminates. The device, by utilizing the successive carriers accumulations of step-graded InGaAs subwells and the barrier lowering effect, provides MNDR properties and good potential for multiple-valued logic circuit applications.

Dependencies are inferred from the claim text.