Pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMitsuhiro Ohkuni, Shunsuke Kugo, Tomoyuki Sasaki, Kenji Tateiwa, Hideo Nikoh
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Abstract
After an organic bottom anti-reflective coating (12) is deposited on an underlying film (11), a resist pattern (15) is formed on the organic bottom anti-reflective coating (12). Dry etching is performed with respect to the organic bottom anti-reflective coating (12) masked with the resist pattern (15) to form an anti-reflective coating pattern. The dry-etching of the organic bottom anti-reflective coating (12) is performed by using etching gas containing gas having the S component such as SO2/O2-based etching gas or COS/O2-based etching gas.
Claims13
A pattern formation method comprising:
- a first step of depositing an organic bottom anti-reflective coating on an underlying film formed on a substrate;
- a second step of forming a resist pattern on said organic bottom anti-reflective coating;
- and
- a third step of performing dry etching with respect to said organic bottom anti-reflective coating masked with said resist pattern to form an anti-reflective coating pattern composed of said organic bottom anti-reflective coating, wherein
- said third step includes the step of performing dry etching by using etching gas containing gas having a S component to form said anti-reflective coating pattern such that said underlying film is not substantially etched.
A pattern formation method comprising:
- a first step of depositing an organic bottom anti-reflective coating on an underlying film formed on a substrate;
- a second step of forming a resist pattern on said organic bottom anti-reflective coating;
- and
- a third step of performing dry etching with respect to said organic bottom anti-reflective coating masked with said resist pattern to form an anti-reflective coating pattern composed of said organic bottom anti-reflective coating, wherein said third step includes:
- a pattern forming step of performing dry etching with respect to said organic bottom anti-reflective film by using etching gas containing gas having a S component, without etching said underlying film, to form said anti-reflective coating pattern;
- and
- a S-component removing step of removing the S component remaining on said substrate.
Dependencies are inferred from the claim text.