Method and apparatus for etching a substrate
AssigneeSurface Technology Systems Limited
InventorsJanet Hopkins, Ian Ronald Johnston, Jyoti Kiron Bhardwaj, Huma Ashraf, Alan Michael Hynes, Leslie Michael Lea
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Abstract
There is disclosed a method and apparatus for etching a substrate. The method comprises the steps of etching a substrate or alternately etching and depositing a passivation layer. A bias frequency, which may be pulsed, may be applied to the substrate and may be at or below the ion plasma frequency.
Claims19
A method of etching a feature in a substrate in a chamber, the method comprising alternately etching by means of a plasma and depositing a passivation layer by means of a plasma, wherein a bias frequency is applied to the substrate which is at or below the ion plasma frequency.
A method of etching a feature in a substrate in a chamber, the method comprising alternately etching by means of a plasma and depositing a passivation layer by means of a plasma, wherein a pulsed bias frequency is applied to the substrate.
A method of etching a feature in a substrate in a chamber by means of a plasma, the method comprising applying a pulsed bias frequency to the substrate which is at or below the ion plasma frequency.
An apparatus for etching a feature in a substrate, the apparatus comprising a chamber, means for alternately etching the substrate by means of a plasma and depositing a passivation layer by means of a plasma, and means for providing a bias frequency to the substrate which is at or below the ion plasma frequency.
An apparatus for etching a feature in a substrate, the apparatus comprising a chamber, means for alternately etching the substrate by means of a plasma and depositing a passivation layer by means of a plasma, and means for providing a pulsed bias frequency to the substrate.
An apparatus for etching a feature in a substrate, the apparatus comprising a chamber, means for etching the substrate by means of a plasma and means for providing a pulsed bias frequency to the substrate which is at or below the ion plasma frequency.
Dependencies are inferred from the claim text.