Method for fabricating metal interconnect structure
AssigneeWorldwide Semiconductor Manufacturing Corp.
InventorChine-Gie Lou
Life of this patent
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Abstract
A method for fabricating a metal interconnect structure. A first insulating layer and a second insulating layer with a low dielectric constant are formed on a substrate in sequence. An opening is formed in the second insulating layer. A compact and high density third insulating layer is formed on the second insulating layer and in the opening to protect the second insulating layer from being damaged in a subsequent process for removing a photo-resist layer. A contact window is then formed in the third insulating layer at a bottom of the opening and the first insulating layer, so that a dual damascene opening is formed. The dual damascene opening is filled with metal with low resistivity to form the metal interconnect.
Claims15
A method for fabricating a metal interconnect structure, comprising the steps of:
- providing a substrate with a first conductive layer therein;
- forming a first insulating layer and a second insulating layer sequentially on the substrate;
- patterning the second insulating layer to form a first opening exposing a part of the first insulating layer;
- forming a third insulating layer on the second insulating layer and in the first opening;
- providing a patterned photo-resist layer over the third insulating layer;
- patterning the third insulating layer at a bottom of the first opening and the underlying first insulating layer to form a second opening under the first opening, so that a part of the first conductive layer is exposed by the second opening;
- removing the patterned photo-resist layer;
- and
- filling the first and the second opening with a second conductive layer.
A method for fabricating a metal interconnect structure, comprising the steps of:
- providing a substrate comprising a first conductive layer;
- sequentially forming a first and a second insulating layers on the substrate;
- patterning the second insulating layer to form a first opening exposing a part of the first insulating layer;
- forming a third insulating layer on the second insulating layer and in the underlying first opening;
- patterning the third insulating layer on a bottom of the first opening and the first insulating layer to form a second opening exposing the first conductive layer;
- and
- filling the first and the second openings with a second conductive layer.
Dependencies are inferred from the claim text.