Back to results
US 6,187,650 B1Granted
Method for improving global planarization uniformity of a silicon nitride layer used in the formation of trenches by using a sandwich stop layer
AssigneesProMOS Tech., Inc., Mosel Vitelic, Inc., Infineon Tech. Inc.
InventorsJoseph Wu, Sheng-Fen Chiu, J. S. Shiao
Life of this patent
Estimating the term…
Abstract
A method of forming a planar silicon nitride layer is disclosed. The method comprises: forming a pad oxide layer; forming a first nitride layer on the pad oxide layer; forming a stop layer on the first nitride layer; forming a second nitride layer on the stop layer; performing intermediate processes that damage the second nitride layer; removing the second nitride layer; removing the stop layer such that the first nitride layer remains as the planar silicon nitride layer.
Claims6
A method of forming a planar silicon nitride layer on a substrate, said method comprising:
- forming a first nitride layer on said substrate;
- forming a stop layer on said first nitride layer, said stop layer having a thickness of about 150 angstroms;
- forming a second nitride layer on said stop layer;
- performing intermediate processes that damage said second nitride layer;
- removing said second nitride layer using said stop layer as an etching stop;
- and
- removing said stop layer.
4 more elements
Dependencies are inferred from the claim text.