Method of manufacturing lateral high-Q inductor for semiconductor devices

Abstract

A method of forming an inductor for a semiconductor device comprises the steps of forming the bottom legs on a first substrate; depositing a second substrate layer over the first substrate; forming the pair of side legs for each loop through the second substrate layer; and, forming top legs connecting pairs of side legs extending from adjacent bottom legs. The step of providing the side legs includes forming a pair of vias through the second substrate layer to the bottom legs, and depositing side legs in the vias. The step of forming the top legs preferably includes forming a channel between the pairs of vias respectively communicating with the adjacent bottom legs, and depositing top legs in the channels. Additionally, the steps of forming the side and top legs are performed concurrently.

Dependencies are inferred from the claim text.