Semiconductor processing method of forming hemispherical grain polysilicon and a substrate having a hemispherical grain polysilicon layer

A semiconductor processing method of depositing a hemispherical grain polysilicon layer on a substrate comprising the following sequential steps:

• chemical vapor depositing a layer of polysilicon atop a substrate within a chemical vapor deposition reactor at a [selected] temperature of between approximately 580° C. to 700° C. and at sub-atmospheric pressure;
• without removing the substrate from the reactor after depositing the polysilicon layer, in situ exposing the polysilicon layer to oxidizing conditions within the reactor effective to grow a layer of silicon dioxide to a thickness of from 35 Angstroms to 60 Angstroms, the oxidizing conditions comprising atmospheric pressure and O3;
• and
• without removing the substrate from the reactor after the oxidizing step, and without exposing the substrate to HF after chemical vapor depositing the layer of polysilicon, in situ chemical vapor depositing a layer of hemispherical grain polysilicon over the silicon dioxide layer at sub-atmospheric pressure, the hemispherical grain polysilicon being formed to a thickness of from 750 Angstroms to 1000 Angstroms.