Lading plug contact pattern for DRAM application
AssigneeWinbond Electronics Corp.
InventorsHsi-Chuan Chen, Sen-Huan Huang
Life of this patent
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Abstract
A method of fabricating a semiconductor device having a landing plug is provided. First, a substrate is provided, which has active areas, wordlines stretching over the active areas and an isolation layer filling the gaps between the wordlines. Second, a pattern is defined and the isolation layer masked with the pattern is etched for the formation of bitline and node contacts, wherein the pattern has a protrusion which shortens the length of the bitline to wordline overlap formed thereby. Finally, the contacts are filled with a conducting layer.
Claims16
A method of fabricating a semiconductor device having a landing plug, comprising the steps of:
- providing a substrate having active areas, wordlines stretching over the active areas and an isolation layer filling the gaps between the worlines;
- defining a pattern, masking and etching the isolation layer with the pattern for the formation of bitline and node contacts, wherein the pattern has a protrusion which shortens the length of the bitlines formed thereby;
- and
- filling the contacts with a conducting layer.
A method of fabricating a semiconductor device having a landing plug, comprising the steps of:
- providing a substrate and forming active areas thereon;
- performing ion implantation to form source and drain regions in the active areas on the substrate;
- depositing a gate oxide, a polysilicon layer, a metallic layer and a nitride layer sequentially;
- defining regions for wordlines, and etching through the nitride, metallic and polysilicon layer outside the regions;
- depositing an covering isolation film and filling the gaps between the wordlines with an isolation layer;
- defining a pattern, masking and etching the isolation layer with the pattern for the formation of bitline and node contacts, wherein the pattern has a protrusion which shortens the length of the bitlines formed thereby;
- and
- filling the contacts with a conducting layer.
Dependencies are inferred from the claim text.