Method of manufacturing semiconductor device
AssigneeNEC Corporation
InventorsToshiyuki Hirota, Kenji Okamura, Fumihide Sato
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, silicon films are formed on the semiconductor substrate and at the same time first and second endpoint marker layers for dividing the silicon films into three parts in the direction of thickness are formed by using a material different from the material of the silicon films. The silicon films including the first and second endpoint marker layers are etched. The etching depth of the silicon films is controlled based on the type of etched material, thereby forming the storage electrode.
Claims18
A method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, comprising the steps of:
- forming silicon films on the semiconductor substrate and at the same time forming first and second endpoint marker layers for dividing the silicon films into three parts in a direction of thickness by using a material different from a material of the silicon films;
- etching the silicon films including the first and second endpoint marker layers;
- and
- controlling an etching depth of the silicon films based on the type of etched material, thereby forming the storage electrode.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a semiconductor element on a semiconductor substrate;
- forming an interlevel insulating film on the semiconductor element;
- forming a contact hole in the interlevel insulating film to reach the semiconductor substrate;
- forming a first silicon film on the interlevel insulating film to fill the contact hole with the first silicon film;
- forming a first endpoint marker layer on the first silicon film from a material different from a material of the first silicon film;
- forming a second silicon film on the first endpoint marker layer;
- forming a second endpoint marker layer on the second silicon film from a material different from a material of a storage electrode;
- forming a third silicon film on the second endpoint marker layer;
- etching the third silicon film to form a fourth silicon film having a width above the contact hole, the etching being controlled in accordance with changes in type of etched material;
- forming a sidewall from silicon oxide on a sidewall of the fourth silicon film;
- and
- etching the second and fourth silicon films using the sidewall as a mask, and forming an opening in the second silicon film to form a storage electrode, the etching being controlled in accordance with changes in type of etched material.
Dependencies are inferred from the claim text.