Antireflective coating for photoresist compositions

A coating composition for use in photolithography, comprising

• a) a polymer having a structure,
• where,
• R1-R3 are independently H, (C1-C10) alkyl or (C1-C10) alkoxy,
• R5-R8 do not have a crosslinking group and are independently H, (C1-C10) alkyl, (C1-C10) alkoxy, hydroxyalkyl, nitro, halide, cyano, aryl, alkylaryl, alkenyl, dicyanovinyl, SO2CF3, COOZ, SO3Z, COZ, OZ, NZ2, SZ, SO2Z, NHCOZ, SO2NZ2, where Z is H or (C1-C10) alkyl, hydroxy (C1-C10) alkyl, (C1-C10)alkylOCOCH2COCH3, or R7 and R8 combine to form a cyclic group,
• X1 is C═O, OCO, CONH, O, aryl, (C1-C10) alkyl, cyclohexyl, pyridine or pyrollidone,
• X2 is S, S(C1-C10) alkyl, O, O(C1-C10) alkyl, NH, N(C1-C10) alkyl, alkyl, or hydroxyalkyl(C1-C10),
• n is independently 0-2,
• A is an electronwithdrawing group,
• Y is a conjugated moiety e.g. N═N, CW═CW, CW═N, or N═CW, where W is H, (C1-C10) alkyl or (C1-C10) alkoxy,
• x>0, and y≧0, and
• B is selected from a 5-10 membered aromatic group, polyaromatic group or a heterocyclic aromatic group;
• and,
• b) a suitable solvent.