Semiconductive material stencil mask and methods of manufacturing stencil masks from semiconductive material, utilizing different dopants

A method of manufacturing a stencil mask from a semiconductive material comprising:

• providing a semiconductive material stencil mask substrate having openings formed therethrough and having a concentration of a background dopant of a first conductivity type;
• providing a first dopant of a second conductivity type within at least a portion of the substrate, the first dopant being provided to a concentration which exceeds the background dopant concentration;
• and
• providing a second dopant of the first conductivity type within the portion of the substrate, the second dopant being provided to a concentration which exceeds the background dopant concentration.

A method of manufacturing a stencil mask from a semiconductive material comprising:

• providing a semiconductive material wafer, the wafer comprising an upper portion and a lower portion beneath the upper portion and a background dopant of a first conductivity type;
• forming openings extending through the upper portion of the wafer and to the lower portion of the wafer;
• forming a concentration of a first dopant of a second conductivity type within the wafer, the first dopant concentration being greater within the upper portion of the wafer than within at least a part of the lower portion of the wafer;
• providing a concentration of a second dopant of the first conductivity type within the upper portion of the wafer;
• and
• removing the lower portion of the wafer to leave a stencil mask substrate having openings formed therethrough.

A method of manufacturing a stencil mask from a semiconductive material comprising:

• providing a semiconductive material having a top surface and a bottom surface, the semiconductive material comprising monocrystalline silicon and having a background p-type dopant concentration;
• providing a first dopant at the top surface and within the semiconductive material to form a doped upper portion within the semiconductive material, the first dopant being an n-type dopant;
• defining a lower portion of the semiconductive material as a portion extending from the botton surface to the doped upper portion;
• providing a second dopant at the top surface and within the doped upper portion of the semiconductive material, the second dopant being a p-type dopant and provided to a concentration greater than the background p-type dopant concentration;
• forming openings through the upper portion of the semiconductive material and to the lower portion, the openings being defined by peripheries comprising the semiconductive material, the peripheries further comprising the first and second dopants;
• and
• removing the lower portion of the semiconductive material to form a stencil mask having the openings extending therethrough.