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US 6,187,392 B1Granted
Laser desorption of CVD precursor species
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
Life of this patent
Estimating the term…
Abstract
Relatively cool chemical vapor deposition precursor particles are desorbed from a target by increasing the temperature of a selected target area at a heating rate of at least about 106 K/sec such that heat energy causes the desorption of at least one CVD precursor particle intact from the target, such that intermediate bonds between the precursor particles and adjacent particles are heated at a higher rate than the precursor's internal bonds, or such that a substantial portion of heat energy is not transferred to the internal modes of the CVD precursor particle.
Claims4
A chemical vapor deposition process comprising the steps of:
- positioning a target within a chamber, said target comprising CVD precursor particles, said CVD precursor particles having a characteristic precursor particle vaporization temperature;
- transferring heat energy to a selected target area of said target to induce a predetermined temperature increase in said selected target area, wherein said predetermined temperature increase is characterized by a predetermined heating rate, and wherein said predetermined heating rate is selected such that said heat energy causes the desorption of at least one CVD precursor particle to define a precursor desorption region and such that a substantial portion of said heat energy is not transferred to the internal energy modes of said CVD precursor particle, whereby said transfer of heat energy to said selected target area induces said predetermined temperature increase in said selected target area without raising the temperature of precursor particles within said selected target area to said characteristic precursor particle vaporization temperature;
- and
- positioning a deposition substrate in particulate communication with said precursor desorption region.
1 more element
A chemical vapor deposition process comprising the steps of:
- positioning a target within a chamber, said target comprising CVD precursor particles bound to adjacent particles via intermediate bonds, wherein said CVD precursor particles have a characteristic precursor particle vaporization temperature;
- transferring heat energy to a selected target area of said target to induce a predetermined temperature increase in said selected target area, wherein said predetermined temperature increase is characterized by a predetermined heating rate, and wherein said predetermined heating rate is selected such that said intermediate bonds are heated at a higher rate than internal bonds of said precursor particles, whereby said transfer of heat energy to said selected target area induces said predetermined temperature increase in said selected target area without raising the temperature of precursor particles within said selected target area to said characteristic precursor particle vaporization temperature;
- and
- positioning a deposition substrate in particulate communication with said selected target area.
1 more element
A chemical vapor deposition process comprising the steps of:
- positioning a target within a chamber, said target comprising CVD precursor particles and adjacent particles, wherein said CVD precursor particles have a characteristic precursor particle vaporization temperature;
- desorbing said precursor particles from said target to define a precursor desorption region adjacent said target by focusing a pulsed laser beam on said selected target area, wherein said pulsed laser beam is characterized by a pulse width of about 10 ns or less and wherein said pulsed laser beam is operative to increase the temperature of a selected target area of said target at a heating rate of at least about 106 K/sec, whereby said transfer of heat energy to said selected target area induces said predetermined temperature increase in said selected target area without raising the temperature of precursor particles within said selected target area to said characteristic precursor particle vaporization temperature;
- and
- positioning a deposition substrate in particulate communication with said precursor desorption region.
1 more element
A chemical vapor deposition process comprising the steps of:
- positioning a target within a chamber, said target comprising CVD precursor particles defining characteristic internal energy modes;
- transferring heat energy to a selected target area of said target by focusing a pulsed laser beam of a predetermined power, wavelength, and pulse width on a selected target area of said target, wherein said power, wavelength, and pulse width of said pulsed laser beam are selected such that at least one CVD precursor particle is desorbed from said selected target area to define a precursor desorption region and such that a substantial portion of said heat energy is not transferred to said internal energy modes of said CVD precursor particle;
- and
- positioning a deposition substrate in particulate communication with said precursor desorption region.
1 more element
Dependencies are inferred from the claim text.