Single crystal SIC and method of producing the same

Abstract

In single crystal SiC according to the present invention, a single crystal α-SiC substrate and a polycrystalline β-SiC plate are laminated to each other for fixation, the single crystal α-Sic substrate and the polycrystalline β-SiC plate are subjected to heat treatment under an inert gas atmosphere and a saturated SiC vapor atmosphere, whereby the single crystallization owing to solid-phase transformation of the polycrystalline β-SiC plate and a progress of the single crystallization to a surface direction wherein a contact point is regarded as a starting point make a whole surface of layer of the polycrystalline β-SiC plate grow efficiently into a single crystal integrated with the single crystal α-SiC substrate, whereby it is possible to produce single crystal SiC having high quality with high productivity, which is substantially free from lattice defects and micropipe defects.

Dependencies are inferred from the claim text.