Find end point of CLF3 clean by pressure change

A method for end-point detection of a CVD reaction chamber cleaning process, said CVD reaction chamber being used for successive deposition of reactant gasses that are deposited for formation of semiconductor devices, said reactant gasses being sequentially deposited in an uninterrupted processing sequence over a surface of at least one semiconductor substrate that is positioned inside said CVD reaction chamber, said sequential deposition comprising a deposition of WF6 or WSix followed by a deposition of SiClH2 followed by a deposition of SiH4, said method comprising:

• providing a reaction chamber adapted to receive a semiconductor substrate and to perform deposition of reactant gas therein;
• providing a least one semiconductor substrate, positioning said at least one semiconductor substrate in said CVD reaction chamber, said positioning to be such that reactant gasses can be deposited on a surface of said at least one semiconductor substrate;
• initiating said deposition processes within said CVD reaction chamber, whereby each deposition process is performed to completion of said deposition process, whereby said deposition process is completed after a deposition of WF6 or WSix followed by a deposition of SiClH2 followed by a deposition of SiH4 over a surface of said at least one semiconductor substrate;
• tracking frequency of completion of said CVD reaction chamber deposition processes since a preceding reaction cleaning process has been completed;
• initiating said CVD reaction chamber cleaning process, said CVD reaction chamber cleaning process being initiated after said frequency of completion has reached a limit, said initiating of said CVD reaction chamber cleaning process to be performed after removing said at least one semiconductor substrate from said CVD chamber;
• tracking pressure within said reaction chamber during said CVD reaction chamber cleaning process;
• determining positive and negative gradient of change of said pressure as a function of time;
• tracking positive and negative gradient of pressure change as a function of time;
• determining that said CVD reaction chamber cleaning process is completed;
• and
• terminating said reaction chamber cleaning process.

A method for end-point detection of a CVD reaction chamber cleaning process whereby said CVD reaction chamber is used for successive deposition of reactant gasses that are deposited for formation of semiconductor devices, said reactant gasses being sequentially deposited in an uninterrupted processing sequence over a surface of at least one semiconductor substrate that is positioned inside said CVD reaction chamber, said sequential deposition comprising a deposition of WF6 or WSix followed by a deposition of SiClH2 followed by a deposition of SiH4, said method comprising:

• providing a reaction chamber adapted to receive a semiconductor substrate and to perform deposition of reactant gas therein;
• providing a least one semiconductor substrate, positioning said at least one semiconductor substrate in said CVD reaction chamber, said positioning to be such that reactant gasses can be deposited on a surface of said at least one semiconductor substrate;
• initiating said deposition processes within said CVD reaction chamber, whereby each deposition process is performed to completion of said deposition process, whereby said deposition process is completed after a deposition of WF6 or WSix followed by a deposition of SiClH2 followed by a deposition of SiH4 over a surface of said at least one semiconductor substrate;
• tracking frequency of said CVD reaction chamber deposition processes completed since a preceding reaction cleaning process has been completed, identifying each occurrence of said CVD reaction chamber deposition processing that occurred since completion of a preceding CVD reaction chamber cleaning process, accumulating a total number of said occurrences of said CVD reaction chamber deposition processing;
• initiating said CVD reaction chamber cleaning process by introducing ClF3 as a cleaning agent into said CVD reaction chamber, said initiation to occur when said accumulated total number of said occurrences of said CVD reaction chamber deposition processing has reached a limit, said cleaning process to be performed after removing of said at least one semiconductor substrate from said CVD chamber after said frequency of completion of said CVD reaction chamber deposition processes since a preceding reaction cleaning process has been completed has been reached;
• tracking pressure within said reaction chamber during said CVD reaction chamber cleaning process;
• determining positive and negative gradient of the change of said pressure as a function of time;
• tracking positive and negative gradient of pressure change as a function of time;
• determining that said CVD reaction chamber cleaning process is completed, wherein determining that said CVD reaction chamber cleaning process is completed is determining when a sequence of a first positive gradient of pressure change followed by a second positive gradient of pressure change followed by a first negative gradient of pressure change has been completed;
• and
• terminating said reaction chamber cleaning process.