Apparatus and method for aligning and controlling edge deposition on a substrate

A deposition system for processing a substrate, comprising:

• a process chamber;
• a support member positioned in the process chamber;
• a gas channel disposed in the support member defining a periphery of an interior region and defining an exterior region surrounding the interior region;
• a plurality of guide pins coupled to the exterior region and spaced about the periphery of the gas channel, the plurality of guide pins disposed at least partially over the gas channel and having an inner surface that together define a circumferential boundary to receive the substrate therein;
• and
• a communication passageway extending through each of the plurality of guide pins providing fluid communication from below the plurality of guide pins to the upper surface of the substrate.

An apparatus for aligning a shadow ring and a substrate relative to an upper surface of a support member and to one another in a process chamber, the substrate having a peripheral edge, an upper surface, a thickness, and a shape, comprising:

• the shadow ring vertically, slidably supported on a hanger member;
• a support member disposed within the process chamber, the support member movable vertically between a first position and a second position;
• a plurality of guide pins coupled to an upper surface of the support member, the plurality of guide pins each having an inner surface that together define a circumferential boundary to receive the substrate therein and that is substantially coextensive with the shape and size of the substrate and wherein the inner surface defines a communication passageway providing a flow path for a gas;
• and
• abutment surfaces on the shadow ring positioned and adapted to mate with and abut at least one of the plurality of guide pins.

A chemical vapor deposition system for processing a substrate, comprising:

• a process chamber;
• a shadow ring positioned in the process chamber vertically, slidably supported on a hanger member;
• a support member disposed within the process chamber, the support member movable vertically between a first position and a second position;
• so that, in the first position of the support member, the shadow ring is supported by the hanger member;
• and
• so that, in the second position of the support member, the shadow ring covers an outer peripheral portion of the substrate;
• a plurality of guide pins coupled to an upper surface of the support member, the plurality of guide pins each having an inner surface that together define a circumferential boundary to receive the substrate therein and that is substantially coextensive with the shape and size of the substrate and wherein the inner surface defines a communication passageway providing a flow path for a gas;
• and
• the shadow ring defining at least one abutment surface positioned and adapted to mate with and abut at least one of the plurality of guide pins;
• so that, as the support member moves from the first position to the second position, the at least one abutment surface mates with and abuts at least one of the plurality of guide pins and aligns the shadow ring relative to the support member.